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| SMD-Photodiode Preliminary Wavelength Red Type SMD 6/21/2007 Technology AlGaAs/GaAs EPD-660-1-0.9 rev. 03/07 Case SMD 1206 Description 2 all dimensions: mm all tolerances: 0,1 pad 1,15 x 1,0 cathode Narrow bandwidth and high spectral sensitivity in the red visible range (610...700 nm), compact design in standard SMD package allows for easy circuit board mounting and assembling of arrays 0,5 1,2 1,6 0, 3 1,2 Applications Light barriers, optical communications, safety equipment, alarm systems R 3,2 Miscellaneous Parameters Tamb = 25 unless otherwise specified C, Parameter Active area Operating temperature range Storage temperature range Test onditions Symbol A Tamb Tstg Value 0.62 -20 to +85 -40 to +125 Unit mm C C Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Parameter Breakdown voltage1) Dark current (Ee = 0 W/m) Responsivity at P Peak sensitivity Sensitivity range at 50% Spectral bandwidth at 50% Shunt resistance Noise equivalent power Specific detectivity Junction capacitance Switching time (RL = 50 1) Test conditions IR = 10 A VR = 1 V VR = 0 V VR = 0 V VR = 0 V VR = 0 V VR = 10 mV = 660 nm = 660 nm VR = 0 V ) VR = 1 V Symbol VR ID S P min, max 0.5 RSH NEP D* CJ tr, tf 1,0 Min Typ 10 40 0.42 660 Max Unit V 300 pA A/W nm 620 80 200 400 8.5x10 40 40 -15 700 nm nm G W/ Hz cm Hz W -1 9.2x1012 pF ns for information only Labeling Type EPD-660-1-0.9 *Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 Lot N Typ. S [A/W] Quantity SMD-Photodiode Preliminary 6/21/2007 EPD-660-1-0.9 rev. 03/07 Optical sensitivity (typically) 1,0 0,8 0,6 0,4 0,2 0,0 500 550 600 650 700 750 800 Sensitivity (arb. units) W avelength [nm] EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 2 of 2 |
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